MJE13001 NPN Power Transistor

MJE13001是common BJT NPN switching transistorthat is found in lamp ballasts and (cheap) phone chargers because of its high breakdown voltage and current capacity. It comes both in an SMD SOT-89 variant and a TO-92 THT variant.

MJE13001 Pinout Description

Features and Specifications

• 600V collector-emitter breakdown
• 200mA collector current
• Current gain of up to 70
• SOT-89 and TO-92 package
• Power dissipation 750mW (TO-92), 550mW (SOT-89)

Note:Complete technical details can be found in theMJE13001datasheetlinked at the end of this page.

Equivalent

APT13005D, MJE13007

How To Use MJE13001

MJE13001是nNPN bipolar transistorfeaturing a high breakdown voltage of 600V between the collector and emitter and a medium emitter current of 200mA.The high breakdown voltage and current-carrying capability make it particularly suited forlow-power SMPSandlamp ballasts. It can also be used to switch loads at high voltages.

Since this is ahigh voltage transistor, it has a few differences when compared to a lower voltage transistor. The first is the high base-emitter voltage of up to 1.1V, instead of the usual 0.6V. This must be accounted for when designing the driving circuitry.The cut-off current is also relatively high – 200uA when there is no base-emitter bias. This might cause problems upstream, and should be taken into account.The storage time is specified as 1.5us, meaning the transistor takes at least 1.5us to turn off after being turned on. This can be mitigated to some extent by adding a capacitor parallel to the base resistor to quickly remove current from the transistor base.

Applications

• Fluorescent lamp
• Electronic ballast
• Rectifier circuits

2D Model and Dimensions