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场效应晶体管

TO-Leadless Packaged Silicon Carbide MOSFET
TO-Leadless Packaged Silicon Carbide MOSFET

New TO-Leadless Packaged Silicon Carbide MOSFET with Low Output Capacitance and 30% Savings in PCB Area

onsemi has announced the new TO-Leadless (TOLL) packaged silicon carbide (SiC) MOSFET that addresses the rapidly growing need for high-performance switching devices which are suitable for designs with high levels of power density.
600V Super Junction MOSFETs
600V Super Junction MOSFETs

New 600V Super Junction MOSFETs with Low ON Resistance designed for Significantly Lower Power Consumption in Home Appliances and Industrial Equipment

ROHM Semiconductor has added seven new products to its PrestoMOS lineup of 600V Super Junction MOSFETs which stand out for their low ON resistance and fastest reverse recover
3.3 kV SiC MOSFETs and High Current-rated SiC SBDs
3.3 kV SiC MOSFETs and High Current-rated SiC SBDs

3.3 kV SiC MOSFETs and High Current-rated SiC SBDs designed to Develop Efficient Solutions for Electrified Transportation and Industrial Applications

Microchip Technology Inc. has announced the expansion of its SiC portfolio with the release of the lowest on-resistance [RDS(on)]
650V CoolSiC MOSFETs
650V CoolSiC MOSFETs

650V CoolSiC MOSFETs with Increased avalanche Capability target High Power Applications and offer Improved Switching Behavior

Infineon Technologies AG has introduced a new family of CoolSiC 650 V silicon carbide (SiC) MOSFETs that is built on Infineon’s st
αMOS5 Super Junction MOSFETs
αMOS5 Super Junction MOSFETs

αMOS5 Super Junction MOSFETs in Small DFN8x8 Package offer Well-Balanced Footprint and Thermal Dissipation

Alpha and Omega Semiconductor Limited has announced the release of 600V 110mOhm and 140mOhm αMOS5 Super Junction MOSFETs in DFN8x8 Package that are designed to meet the high efficiency and high-density needs for Quick Charger, Adapter, PC Power, Server, Industrial Power
OptiMOS 5功率MOSFET解决方案PQFN 2 x2 Package
OptiMOS 5功率MOSFET解决方案PQFN 2 x2 Package

New OptiMOS 5 Power MOSFET Solutions in PQFN 2x2 Package offer Smallest Form Factor, Low On-State Resistance, and Switching Performance Standards

Infineon Technologies AG has introduced its new PQFN 2 x 2 mm2 OptiMOS 5 25V and 30V product
N-Channel TrenchFET MOSFETs
N-Channel TrenchFET MOSFETs

Compact N-Channel MOSFETs in PowerPAK 8x8L Package feature Bond Wireless Construction and Gullwing Leads for Increased Board-Level Reliability

威世半导体推出了新的60 vSiJH600E and 80V SiJH800E n-channel TrenchFET MOSFETs that combi
SiC MOSFET Dual Modules
SiC MOSFET Dual Modules

High-Power SiC MOSFET Dual Modules with Built-in NTC Thermistor designed for Renewable Energy Power Generation Systems

Toshiba Electronic Devices & Storage Corporation has introduced two new SiC MOSFET dual modules that have mounting compatibility with widely used silicon (Si) IGBT modules and their low energy loss characteristics meet needs for higher efficiency and size reductions
Dual-Channel High-Side MOSFET Gate Driver
Dual-Channel High-Side MOSFET Gate Driver

48V Smart, Dual-Channel High-Side MOSFET Gate Driver with SPI Interface designed for Automotive Applications

Infineon Technologies AG has introduced the EiceDRIVER 2ED4820-EM which is a smart gate driver with an SPI interface and is an ideal companion to Infineon’